TECHNIQUES FOR STORING BITS IN MEMORY CELLS HAVING STUCK-AT FAULTS

摘要

A data storing system comprises a memory circuit having a memory cell and a control circuit. The control circuit generates a first double bit set which shows the bit position of a memory cell having a stuck-at fault in response to a first writing operation when a first ratio of the stuck-at fault in the memory cell exceeds a first threshold. The control circuit encodes a data bit and generates the encoded data bit and a second double bit set. The second double bit set shows conversion performed for the data bit to generate the data bit which is encoded in response to a second writing operation when a second ratio of the stuck-at fault in the memory cell exceeds a second threshold. The encoded data bit stored in the memory cell having the stuck-at fault is matched with a digital value of a response fault among the stuck-at fault.