| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a self-supporting ammonothermal III group metal nitride crystal by treating a material for production of a gallium-containing substrate.SOLUTION: An ammonothermal III group metal nitride crystal has a wurtzite crystalline structure and includes a first large-area surface having the largest size greater than about 10 mm, and the first large-area surface includes locally a pattern of a nearly linear threading dislocation array. The III group metal nitride crystal is formed by arranging a substrate, a III group metal source, a mineralizer and ammonia in sealable container, forming a one- or two-dimensional array-like opening on the substrate, heating to a temperature higher than 400°C to grow III group metal nitride laterally on a pattern mask layer through the two-dimensional array-like opening, forming a pattern-like ammonothermal III group metal nitride layer by joining and removing the substrate to form a self-supporting ammonothermal III group metal nitride crystal. |
