发明名称 |
CONFORMAL FILM DEPOSITION FOR GAPFILL |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate.SOLUTION: A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer by CFD.</p> |
申请公布号 |
JP2014112668(A) |
申请公布日期 |
2014.06.19 |
申请号 |
JP20130230782 |
申请日期 |
2013.11.07 |
申请人 |
NOVELLUS SYSTEMS INCORPORATED |
发明人 |
SHANKAR SWAMINATHAN;SCHRAVENDIJK BART J VAN;ADRIEN LAVOIE;SESHA VARADARAJAN;JASON DAEJIN PARK;MICHAL DANEK;SHODA NAOHIRO |
分类号 |
H01L21/316;C23C16/42;C23C16/455;H01L21/3065 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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