| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure and a method capable of manufacturing an active matrix light-emitting device in a short time, with a high yield, and at low cost as compared with conventional light-emitting devices.SOLUTION: A light-emitting device comprises a transistor, a light-emitting element electrically connected to the transistor, and an insulator 19. The light-emitting element includes first electrodes 18a and 18b, a light-emitting layer 20b overlapping the first electrodes, and a second electrode 21 overlapping the light-emitting layer. The first electrodes of the light-emitting element include a first region, a second region, and a step region between the first region and the second region. The first region overlaps the light-emitting layer. The step region overlaps the insulator. The second region overlaps a contact region of the transistor. The first region and the second region are formed through the same etching process.</p> |
