| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of using a film for semiconductor carrier in which the insulation resistance between terminals is less likely to deteriorate than conventional one, even under high temperature high humidity environment, so that it is applicable to fine pitch or high output.SOLUTION: A film 1 for semiconductor carrier includes a base film 10 having insulation properties, a barrier layer 2 containing a nickel chromium alloy as a main component formed on the base film 10, and a wiring layer 3 composed of a conductive material containing copper formed on the barrier layer 2, where the chromium content in the barrier layer 2 is 15-50 wt%, and the barrier layer 2 is a non-porous film. It is used under a condition that the surface resistivity of the barrier layer 2 is 30Ω/sq. or more, or the volume resistivity of the barrier layer 2 is 0.9×1E-4Ωcm or more.</p> |
