THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE

摘要

The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (Vth) drift of the TFT, improve Ion (on-state current)/Ioff (off-state current), and enhance thermal stability.

主权项

1. A thin film transistor, including a gate, a gate insulation layer, an oxide active layer, a source, and a drain, wherein a region of the oxide active layer corresponding to a gap between the source and the drain is an active region,
wherein the thin film transistor further includes: a source transition layer formed between the source and the oxide active layer, and a drain transition layer formed between the drain and the oxide active layer, wherein the source transition layer is formed on the oxide active layer, and the source is formed on the source transition layer; the drain transition layer is formed on the oxide active layer, and the drain is formed on the drain transition layer; the source transition layer and the drain transition layer are not connected; and both the source transition layer and the drain transition layer are in direct contact with the oxide active layer.