| 发明名称 |
RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF |
| 摘要 |
A resistive memory device may include a bottom structure, a memory cell structure disposed on the bottom structure, and a data storage material disposed to surround an outer sidewall of the memory cell structure. |
| 申请公布号 |
US2014166965(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201313846129 |
申请日期 |
2013.03.18 |
| 申请人 |
SK HYNIX INC. |
发明人 |
SEO Jung Won;PARK Hae Chan;KIM Myoung Sub;HONG Sung Bin;LEE Se Ho;LEE Seung Yun |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory device, comprising:
a bottom structure; a memory cell structure disposed on the bottom structure; and a data storage material disposed to surround an outer sidewall of the memory cell structure.
|
| 地址 |
Gyeonggi-do KR |
