发明名称 RADIATION DETECTOR
摘要 <p>A radiation detector (10) which has a multilayer structure that comprises: a first electrode (34); a second electrode (49) which is arranged so as to face the first electrode; a selenium layer (48) which is arranged between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) which is arranged adjacent to the selenium layer between the first electrode and the selenium layer and contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) which is arranged adjacent to the selenium layer between the second electrode and the selenium layer and contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.</p>
申请公布号 WO2014092001(A1) 申请公布日期 2014.06.19
申请号 WO2013JP82736 申请日期 2013.12.05
申请人 FUJIFILM CORPORATION 发明人 YAMASHITA, SEIJI;ISE, TOSHIHIRO
分类号 H01L27/146;G01T1/24;H01L27/144;H01L31/0248;H04N5/32 主分类号 H01L27/146
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