APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER

摘要

Apparatus for providing plasma to a process chamber may include an electrode; a first ground plate disposed beneath the electrode defining a cavity therebetween; an insulator disposed between the electrode and first ground plate to prevent direct contact therebetween; a second ground plate disposed beneath the first ground plate defining a first channel; a plurality of first through holes through the first ground plate to fluidly couple the channel and cavity; a first gas inlet coupled to the first channel; a third ground plate disposed beneath the second ground plate defining a second channel; a plurality of conduits through the ground plates to fluidly couple the cavity to an area beneath the third ground plate; a plurality of gas outlet holes through the third ground plate to fluidly couple the second channel to the area beneath the third ground plate; and a second gas inlet coupled to the second channel.