SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND PRODUCTION METHOD OF THEM

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target containing indium oxide, tin oxide and zinc oxide, capable of achieving excellent TFT characteristic in a wide-range In amount.SOLUTION: A sputtering target comprises oxides containing an indium element (In), a tin element (Sn), a zinc element (Zn) and one or more elements X selected from a following X group, and includes a bixbyite structure compound represented by InOand a spinel structure compound. X group: Mg, Al, Ga, Si, Sc, Ti, Y, Zr, Hf, Ta, La, Nd and Sm.