| 发明名称 |
NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHING MATERIAL |
| 摘要 |
A nonvolatile memory cell is provided that includes a diode and a reversible resistance-switching element that includes a resistance-switching metal oxide or nitride, the metal oxide or nitride including only one metal. Numerous other aspects are provided. |
| 申请公布号 |
US2014166968(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201414183797 |
申请日期 |
2014.02.19 |
| 申请人 |
SANDISK 3D LLC |
发明人 |
Herner Scott Brad;Petti Christopher J.;Kumar Tanmay |
| 分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory cell comprising:
a diode; and a reversible resistance-switching element comprising a resistance-switching metal oxide or nitride, the metal oxide or nitride comprising only one metal.
|
| 地址 |
Milpitas CA US |
