APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER

摘要

Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate.

主权项

1. An apparatus for providing a plasma to a process chamber, comprising:
a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate.