QUANTUM NANO JOINT THOMSON ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a spin quantum nano joint Thomson element of a nanometer level by an existing production technology.SOLUTION: The spin quantum nano joint Thomson element made from a p-type semiconductor thin line and an n-type semiconductor thin line is produced by employing a manufacturing method of anisotropically etching an Si single crystal substrate in a TMAH aqueous solution of 40 wt.% at an overheat temperature of 70°C, and employing a mask pattern in which the scale is enlarged. A manufacturing method comprises the steps of; forming an L-shaped V-groove on an Si substrate through anisotropic etching; thermally oxidizing the Si substrate by an oxidation furnace; and embedding a metal film and the n-type semiconductor thin line or the p-type semiconductor thin line in the L-shaped V-groove after the thermally oxidizing step by sputtering or vapor deposition.