MEMORY CELL WITH VOLATILE AND NON-VOLATILE STORAGE

摘要

The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors; and a first resistance switching element (202) coupled between a first supply voltage (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; and control circuitry adapted to store a data value (DNV) at said first and second storage nodes by coupling said first storage node to said second supply voltage (VDD, GND), the data value being determined by the programmed resistance of the first resistance switching element.

主权项

1. A memory device comprising:
at least one memory cell comprising: first and second pairs of transistors each pair coupled in series between first and second supply voltages, wherein a first storage node between the first pair of transistors is coupled to control terminals of the second pair of transistors, and a second storage node between the second pair of transistors is coupled to control terminals of the first pair of transistors; and a first resistance switching element coupled between said first supply voltage and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; a fifth transistor coupled between said first storage node and a first access line; and a sixth transistor coupled between said second storage node and a second access line, wherein said fifth transistor is controlled by a first control line and said sixth transistor is controlled by a second control line independent of the first control line.