| 发明名称 |
FinFET with Embedded MOS Varactor and Method of Making Same |
| 摘要 |
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is semiconductor device including a first FinFET over a substrate, wherein the first FinFET includes a first set of semiconductor fins. The semiconductor device further includes a first body contact for the first FinFET over the substrate, wherein the first body contact includes a second set of semiconductor fins, and wherein the first body contact is laterally adjacent the first FinFET. |
| 申请公布号 |
US2014167172(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213715684 |
申请日期 |
2012.12.14 |
| 申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR |
发明人 |
Chen Wan-Te;Chen Chung-Hui;Horng Jaw-Juinn;Kang Po-Zeng |
| 分类号 |
H01L27/04;H01L21/77;H01L27/088 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first FinFET over a substrate, wherein the first FinFET comprises a first set of semiconductor fins; and a first body contact for the first FinFET over the substrate, wherein the first body contact comprises a second set of semiconductor fins, and wherein the first body contact is laterally adjacent the first FinFET.
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| 地址 |
US |
