发明名称 PHASE SHIFT MASKS AND METHODS OF FORMING PHASE SHIFT MASKS
摘要 A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.
申请公布号 US2014170534(A1) 申请公布日期 2014.06.19
申请号 US201213719910 申请日期 2012.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON Se-Gun;Nam Dong-Seok;Kim Hoon
分类号 G03F1/26 主分类号 G03F1/26
代理机构 代理人
主权项 1. A method of forming a phase shift mask having a first region and a second region in a transverse direction of the phase shift mask, comprising: forming a transmittance control layer on a transparent layer; forming a shading layer on the transmittance control layer; forming a hard mask layer on the shading layer; etching the hard mask layer to form a first hard mask in the first region and to form a second hard mask in the second region; forming a first shading layer pattern in the first region and forming a preliminary second shading layer pattern in the second region by etching the shading layer using the first and the second hard mask patterns as etching masks; forming a transmittance layer pattern beneath the preliminary second shading layer pattern and forming an upper pattern of a phase shift pattern beneath the first shading layer pattern by etching the transmittance layer using the first and the second hard mask patterns and the first and the preliminary second shading layer patterns as etching masks; and forming a lower pattern of the phase shift pattern beneath the upper pattern by etching a portion of the transparent layer.
地址 Suwon-si KR