发明名称 |
CASCODE CIRCUIT |
摘要 |
A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired. |
申请公布号 |
US2014167822(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201314094890 |
申请日期 |
2013.12.03 |
申请人 |
NXP B.V. |
发明人 |
Rutter Philip;Sonsky Jan;Rose Matthias |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
1. A cascode transistor circuit comprising:
a first, depletion mode transistor having its drain for connection to a high power line; a second, silicon MOSFET with its drain connected to the source of the first transistor and its source for connection to a low power line; a substrate on which the first and second transistors are mounted, which has a conductive track providing the connection between the source of the first transistor and the drain of the second transistor.
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地址 |
Eindhoven NL |