发明名称 CASCODE CIRCUIT
摘要 A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired.
申请公布号 US2014167822(A1) 申请公布日期 2014.06.19
申请号 US201314094890 申请日期 2013.12.03
申请人 NXP B.V. 发明人 Rutter Philip;Sonsky Jan;Rose Matthias
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项 1. A cascode transistor circuit comprising: a first, depletion mode transistor having its drain for connection to a high power line; a second, silicon MOSFET with its drain connected to the source of the first transistor and its source for connection to a low power line; a substrate on which the first and second transistors are mounted, which has a conductive track providing the connection between the source of the first transistor and the drain of the second transistor.
地址 Eindhoven NL