发明名称 THREE DIMENSIONAL CAPACITOR
摘要 Integrated capacitor structures and methods for fabricating same are provided. In an embodiment, the integrated capacitor structures exploit the capacitance that can be formed in a plane that is perpendicular to that of the substrate, resulting in three-dimensional capacitor structures. This allows for integrated capacitor structures with higher capacitance to be formed over relatively small substrate areas. Embodiments are suitable for use by charge pumps and can be fabricated to have more or less capacitance as desired by the application.
申请公布号 US2014167220(A1) 申请公布日期 2014.06.19
申请号 US201213715181 申请日期 2012.12.14
申请人 SPANSION LLC 发明人 RAMSBEY Mark;KIM Unsoon;FANG Shenqing;CHEN Chun;CHANG Kuo Tung
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A capacitor structure, comprising: a substrate; a first conductor disposed over the substrate, the first conductor having a top surface, a first sidewall, and a second sidewall; a dielectric layer disposed over the first conductor, the dielectric layer covering the first sidewall and the second sidewall of the first conductor; and a second conductor disposed over the dielectric layer, the second conductor having a first portion disposed along the first sidewall of the first conductor and a second portion disposed along the second sidewall of the first conductor.
地址 Sunnyvale CA US