| 发明名称 |
SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF MANUFACTURE |
| 摘要 |
A semiconductor device includes a substrate and a first and second plurality of stack structures arranged over the substrate. The first and second plurality of stack structures are separated by a gap. The substrate includes a first trench between the structures of the first plurality of stack structures, a second trench between the structures of the second plurality of stack structures, and a third trench in the gap. A depth of the first trench is less than a depth of the third trench. |
| 申请公布号 |
US2014167206(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213716522 |
申请日期 |
2012.12.17 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU MING-TSUNG;HONG SHIH-PING |
| 分类号 |
H01L29/06;H01L21/76 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; and a first and second plurality of stack structures arranged over the substrate, the first plurality of stack structures being arranged more densely than the second plurality of stack structures, and the first and second plurality of stack structures being separated by a gap, wherein the substrate includes a first trench between the structures of the first plurality of stack structures, a second trench between the structures of the second plurality of stack structures, and a third trench in the gap, and a depth of the first trench is less than a depth of the third trench.
|
| 地址 |
Hsinchu TW |
