| 发明名称 |
SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES |
| 摘要 |
A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device. |
| 申请公布号 |
US2014167068(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213718031 |
申请日期 |
2012.12.18 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Stum Zachary Matthew;Ghandi Reza |
| 分类号 |
H01L29/16;H01L21/02 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide device, comprising:
a gate electrode disposed over a portion of a silicon carbide substrate; a dielectric film disposed over the gate electrode; a contact region of the silicon carbide device disposed near the gate electrode; and a layer disposed over the dielectric film and over the contact region, wherein the layer comprises nickel in portions disposed over the dielectric film and wherein the layer comprises nickel silicide in portions disposed over the contact region, and wherein the nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.
|
| 地址 |
Schenectady NY US |
