| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase of variation in the withstand voltage of a semiconductor device, by allowing uniform epitaxial growth rate in the plane of a semiconductor substrate.SOLUTION: When epitaxially growing a p-type layer 15 for embedding a trench 14, temperature distribution is set so that the temperature of a semiconductor substrate 10 becomes higher along a gas flow. More specifically, when rotating the semiconductor substrate 10, the p-type layer 15 is grown epitaxially by setting such a temperature distribution that the temperature of the semiconductor substrate 10 being rotated is lowest on the outer periphery, and highest in the center. Consequently, the epitaxial growth rate can be made uniform in the plane of the semiconductor substrate 10, and increase of variation in the withstand voltage of a semiconductor device can be suppressed. |
