| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate treatment device comprising a treatment room for cooling a substrate with a simple configuration.SOLUTION: In a plasma treatment device 10 configured to perform a plasma treatment on a wafer W, the wafer W subjected to a plasma treatment is transported to a load lock chamber 13, and the wafer W is cooled by ejecting a gas onto a surface of the wafer W from a gas ejection member 25. The gas ejection member 25 has a structure in which a plurality of gas ejection nozzles 35 are formed on one of flat plate surfaces of a flat plate member 31. Each of the gas ejection nozzles 35 includes a swirling current generation chamber 41 in a columnar shape and a nozzle hole 42 which is open in a bottom wall 52 of the swirling current generation chamber 41 and ejects a gas. A flat plate surface of the wafer W and the flat plate surface of the flat plate member 31 on which the gas ejection nozzles 35 are formed are arranged in parallel at a predetermined interval, a purge gas is ejected from the nozzle hole 42 toward the wafer W, the wafer W is cooled by generating a swirling flow in the ejected purge gas, and the inside of the load lock chamber 13 is switched from a vacuum atmosphere to an atmospheric pressure atmosphere.</p> |
