SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES FOR LOGIC AND MULTILEVEL MEMORY APPLICATIONS

摘要

A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Sil-xGex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising Ge/Sil-yGey and a covering region comprising SiO2 and enclosing the center region.

主权项

1. A method to form a microelectronic structure comprising:
providing a substrate including a lower Si substrate and an insulating layer on the substrate; forming a projection on the substrate projecting above the insulating layer and including a center region comprising a floating nanowire channel comprising Ge/Sil-yGEy and a covering region enclosing the center region, wherein the covering region comprises an insulation covering surrounding the nanowire channel and electrically insulating the nanowire channel.