发明名称 |
INTEGRATED CIRCUIT ARRANGEMENT, DEVICE AND GAS DETECTION METHOD |
摘要 |
An integrated circuit arrangement (100) is disclosed comprising a substrate (210); and a gas such as a CO2 sensor comprising spatially separated electrodes including at least an excitation electrode (132) and a sensing electrode (142); a volume (120) in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator (212) conductively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal; and a signal detector (214) conductively coupled to the sensing electrode and adapted to detect a change in said microwave signal caused by a permittivity change in said volume, said permittivity change being caused by said reaction product. A device comprising such an IC arrangement and a method of sensing the presence of a gas using such an IC arrangement are also disclosed. |
申请公布号 |
US2014170762(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201314096147 |
申请日期 |
2013.12.04 |
申请人 |
NXP B.V. |
发明人 |
Soccol Dimitri;Ponomarev Youri Victorovitch;van Steenwinckel David |
分类号 |
G01N27/02 |
主分类号 |
G01N27/02 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit arrangement comprising:
a substrate; and a gas sensor comprising: at least a pair of spatially separated electrodes including an excitation electrode and a sensing electrode; a volume in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator conductively or capacitively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal including a resonance frequency of said reaction product; and a signal detector conductively or capacitively coupled to the sensing electrode and adapted to detect a change in said microwave signal at said resonance frequency caused by a permittivity change in said volume, said permittivity change being caused by the presence of said reaction product.
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地址 |
Eindhoven NL |