发明名称 Method of Fabricating a Layer Stack
摘要 In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.
申请公布号 US2014167270(A1) 申请公布日期 2014.06.19
申请号 US201213716017 申请日期 2012.12.14
申请人 INFINEON TECHNOLOGIES AG 发明人 Ganitzer Paul;Matoy Kurt;Sporn Martin;Harrison Mark
分类号 H01L23/498;H01L21/02 主分类号 H01L23/498
代理机构 代理人
主权项
地址 Neubiberg DE