METHODS OF FORMING A SIDEWALL SPACER HAVING A GENERALLY TRIANGULAR SHAPE AND A SEMICONDUCTOR DEVICE HAVING SUCH A SPACER

摘要

A method of forming a spacer is disclosed that involves forming a layer of spacer material above an etch stop layer, performing a first main etching process on the layer of spacer material to remove some of material, stopping the etching process prior to exposing the etch stop layer and performing a second over-etch process on the layer of spacer material, using the following parameters: an inert gas flow rate of about 50-200 sscm, a reactive gas flow rate of about 3-20 sscm, a passivating gas flow rate of about 3-20 sscm, a processing pressure about 5-15 mT, a power level of about 200-500 W for ion generation and a bias voltage of about 300-500 V. A device includes a gate structure positioned above a semiconducting substrate, a substantially triangular-shaped sidewall spacer positioned proximate the gate structure and an etch stop layer positioned between the spacer and the gate structure.

主权项

1. A method of forming a spacer, comprising:
forming an etch stop layer; forming a layer of spacer material above said etch stop layer; performing a first main reactive ion etching process on said layer of spacer material to remove some of said layer of spacer material; stopping said first main reactive ion etching process prior to exposing said etch stop layer; and after stopping said first main reactive ion etching process, performing a second over-etch ion etching process on said layer of spacer material, wherein said first and second ion etching processes are performed using the following parameters:
an inert gas flow rate within the range of about 50-200 sscm;a reactive gas flow rate within the range of about 3-20 sscm;a passivating gas flow rate within the range of about 3-20 sscm;a processing pressure within about 5-15 mT;a power level of about 200-500 W for ion generation; anda bias voltage of about 300-500 V.