| 发明名称 |
MEMRISTORS HAVING MIXED OXIDE PHASES |
| 摘要 |
A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided. |
| 申请公布号 |
US2014167042(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201114232521 |
申请日期 |
2011.07.14 |
| 申请人 |
Yang Jianhua;Zhang Minxian Max;Miao Feng |
发明人 |
Yang Jianhua;Zhang Minxian Max;Miao Feng |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memristor including:
a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer.
|
| 地址 |
Palo Alto CA US |
