发明名称 |
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR |
摘要 |
The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. |
申请公布号 |
US2014167038(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201414179452 |
申请日期 |
2014.02.12 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.) |
发明人 |
AHN Byung Du;LIM Ji Hun;KIM Gun Hee;LEE Kyoung Won;LEE Je Hun;GOTO HIROSHI;MIKI AYA;MORITA SHINYA;KUGIMIYA TOSHIHIRO;KIM Yeon Hong;MO Yeon Gon;KIM Kwang Suk |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor comprising:
a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
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地址 |
Kobe-shi JP |