发明名称 Backscatter Reduction in Thin Electron Detectors
摘要 In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.
申请公布号 US2014166879(A1) 申请公布日期 2014.06.19
申请号 US201314035486 申请日期 2013.09.24
申请人 FEI Company 发明人 Stekelenburg Michael Alwin William;Van Hoften Gerrit Cornelis;Henderson Richard;McMullan Gregory James;Faruqi Abdul Raffey;Turchetta Renato Andrea Danilo;Guerrini Nicola Carlo;Lof Joeri;Schuurmans Frank Jeroen Pieter
分类号 H01J37/244 主分类号 H01J37/244
代理机构 代理人
主权项
地址 Hillsboro OR US