SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

This semiconductor device includes: lower electrodes (21) which are arranged in rows along a first direction (Y) and a second direction (X) parallel to the surface of a semiconductor substrate (1) and which extend in a third direction (Z) perpendicular to the surface of the semiconductor substrate; a first support film (14) which is arranged on the upper end of the lower electrodes and has multiple first openings (OP11-OP61); a second support film (10) which is arranged in the middle of the lower electrodes in the third direction, and which has multiple second openings (OP12-OP62) aligned in a plane in the same pattern as the first openings; a capacitance insulating film (25) covering the surface of the lower electrodes; and upper electrodes (26) covering the surface of the capacitance insulating film. Each of the first openings (OP21) and second openings (OP22) is configured such that a portion of each of eight lower electrodes (C1-C4, D1-D4) contained in two lower electrode unit groups adjacent in the first direction are collectively positioned inside of the opening, wherein a lower electrode unit group is defined as four lower electrodes adjacent in the second direction.