发明名称 PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a production method of a transparent conductive thin film capable of stable production by reducing dispersion of a resistance value of an obtained crystalline transparent conductive film.SOLUTION: In a production method of a transparent conductive thin film for forming a transparent conductive thin film on a transparent film base by a gas phase method by using a target mainly composed of indium oxide and tin oxide, a film is deposited in an argon atmosphere in which argon gas, nitrogen gas and steam gas are included, and the content of the nitrogen gas is in the range of 2,500 ppm-8,500 ppm to the argon gas, and the content of the steam gas is in the range of 1,450 ppm-13,500 ppm to the argon gas.</p>
申请公布号 JP2014111843(A) 申请公布日期 2014.06.19
申请号 JP20140014312 申请日期 2014.01.29
申请人 NITTO DENKO CORP 发明人 HAISHI MOTOKI;NASHIKI TOMOTAKE
分类号 C23C14/08;C23C14/34;H01B13/00 主分类号 C23C14/08
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