MEMORY FIRST PROCESS FLOW AND DEVICE

摘要

Semiconductor devices and methods of manufacturing such devices are described herein. According to embodiments, a semiconductor device includes a memory gate disposed in a first region of the semiconductor device. The memory gate may include a first gate conductor layer disposed over a charge trapping dielectric. A select gate may be disposed in the first region of the semiconductor device adjacent to a side wall of the memory gate. A side wall dielectric may be disposed between the sidewall of the memory gate and the select gate. Additionally, the device may include a logic gate disposed in a second region of the semiconductor device that comprises the first gate conductor layer.