| 摘要 |
The present invention relates to polishing slurry and a polishing method for a substrate or a wafer using the polishing slurry. The polishing slurry in the present invention has polishing particles with positive surface charges and dispersed therein, and has a high polishing rate even in a low-pressure process, thereby securing excellent process margin. When performing a polishing process using the polishing slurry in the present invention, the distribution of the polishing particles is increased in a high-step height area to obtain a high polishing rate, and the distribution of the polishing particles is decreased in a low-step height area to obtain a low polishing rate, thereby increasing removal efficiency for stepped portions. |
