SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD

摘要

Various embodiments provide a semiconductor structure and fabrication method. An exemplary semiconductor structure can include a semiconductor substrate having an isolation trench formed in the semiconductor substrate. A first barrier layer can be disposed on a bottom surface and a sidewall of the isolation trench. A light absorption layer can be disposed at least on a surface portion of the first barrier layer over the bottom surface of the isolation trench. A second barrier layer can fill the isolation trench to form an isolation structure in the semiconductor substrate. The isolation structure can have a top surface flushed with or over a top surface of the semiconductor substrate.

主权项

1. A semiconductor structure comprising:
a semiconductor substrate including an isolation trench; a first barrier layer disposed on a bottom surface and a sidewall of the isolation trench; a light absorption layer disposed at least on a surface portion of the first barrier layer over the bottom surface of the isolation trench; and a second barrier layer filling the isolation trench to form an isolation structure in the semiconductor substrate, wherein the isolation structure includes the first barrier layer, the light absorption layer, and the second barrier layer and has a top surface flushed with or over a top surface of the semiconductor substrate.