SEMICONDUCTOR DIODE ASSEMBLY

摘要

TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.

主权项

1. A semiconductor chip having a front surface and a back surface, comprising
a substrate of a semiconductor material extending to the back surface of the chip; a layer of epitaxial semiconductor material extending from the substrate to the front surface of the chip; a pair of columns of semiconductor material, each enclosed by a trench structure, which extends from the front surface of the chip and towards the substrate; each of the pair of columns containing no more than one p-n junction, which is co-extensive with radial cross sections of the respective column; and a pair of electrical terminals, each contacting one of the pair of columns of semiconductor material at the front surface of the chip, forming between the terminals an electric circuit that contains at least one and no more than two p-n junctions.