METHOD FOR REDUCING SIZE AND CENTER POSITIONING OF MAGNETIC MEMORY ELEMENT CONTACTS

摘要

A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper surface and into the opening.

主权项

1. A method for fabricating a contact on an upper surface of a memory device comprising:
(a) depositing a dielectric layer surrounding a masking member used to define at least the upper surface of the device; (b) removing the masking member thereby defining an opening in the dielectric layer exposing the upper surface; (c) depositing a conformal layer covering the upper surface of the device and sides of the opening; (d) anisotropically etching the conformal layer thereby forming a spacer lining each opening; (e) depositing a contact material into the opening; and (f) forming a via from the contact material.