SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE

摘要

Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.

主权项

1. A semiconductor device, comprising:
a transistor area and a resistor area, wherein the transistor area comprises an active region in a substrate, and a gate structure on the active region, wherein the resistor area comprises a base insulating layer on a surface of the substrate, and a resistor structure on the base insulating layer, and wherein a top surface of the gate structure and a top surface of the resistor structure are substantially coplanar.