FILM FORMATION DEVICE, SUBSTRATE PROCESSING DEVICE, AND FILM FORMATION METHOD

摘要

A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

主权项

1. A film formation device configured to conduct a film formation process for a substrate in a vacuum chamber, comprising:
a rotating table configured to revolve a substrate mounting area configured to mount the substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area provided separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table to attract an ion in the plasma to a surface of the substrate; an upper bias electrode arranged at the same position of the height or an upper side of a position of the height; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust mechanism configured to exhaust a gas in an inside of the vacuum chamber.