Methods to Improve Leakage of High K Materials

摘要

A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

主权项

1. A method for forming a capacitor stack, the method comprising:
forming a first layer on a substrate,
wherein the first layer is operable as a first electrode layer of the capacitor stack; forming a second layer above the first layer,
wherein the second layer is operable as a dielectric layer,wherein the second layer further comprises a dielectric material and an oxygen donor dopant,wherein the dielectric material comprises one of zirconium oxide or titanium oxide, andwherein the oxygen donor dopant comprises one of chromium oxide, europium oxide, manganese oxide, molybdenum oxide, tin oxide, tungsten oxide, vanadium oxide, or combinations thereof; and forming a third layer above the second layer,
wherein the third layer is operable as a second electrode layer of the capacitor stack.