发明名称 Gate Drive Circuits that Control Electromagnetic Interference and Switching Losses and Related Methods
摘要 Gate drive circuits for use with semiconductor switching devices are provided. The gate drive circuits include a gate resistor of the semiconductor switching device; a resistance control module in series with the gate resistor of the semiconductor switching device, the resistance control module being configured to provide a first resistance that controls electromagnetic interference under normal operating conditions; and a second resistance during abnormal events; and an abnormal event detector coupled to the resistance control module, the abnormal event detector configured to detect an abnormal event and send an abnormal event signal to the resistance control module responsive to detection of the abnormal event. The resistance control module is configured to provide the second resistance by shorting the resistance provided by the resistance control module responsive to the abnormal event signal to provide increased gate drive and reduced switching losses during the abnormal event.
申请公布号 US2014168829(A1) 申请公布日期 2014.06.19
申请号 US201213717927 申请日期 2012.12.18
申请人 EATON CORPORATION 发明人 Johnson, JR. Robert William
分类号 H02H9/00;H02H9/02 主分类号 H02H9/00
代理机构 代理人
主权项 1. A gate drive circuit for use with a semiconductor switching device, the gate drive circuit comprising: a gate resistor of the semiconductor switching device; a resistance control module in series with the gate resistor of the semiconductor switching device, the resistance control module being configured to provide a first resistance that controls electromagnetic interference under normal operating conditions and a second resistance during abnormal events; and an abnormal event detector coupled to the resistance control module, the abnormal event detector configured to detect an abnormal event and send an abnormal event signal to the resistance control module responsive to detection of the abnormal event, wherein the resistance control module is configured to provide the second resistance provided by the resistance control module responsive to the abnormal event signal to provide increased gate drive and reduced switching losses during the abnormal event.
地址 Cleveland OH US