| 发明名称 |
EEPROM CORE STRUCTURE EMBEDDED INTO BCD PROCESS AND FORMING METHOD THEREOF |
| 摘要 |
The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD process comprises a selection transistor and a storage transistor connected in series, wherein the selection transistor is an LDNMOS transistor. The present invention may embed the procedure for forming the EEPROM core structure into the BCD process, which is favorable to reduce the complexity of the process. |
| 申请公布号 |
US2014167130(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201214238057 |
申请日期 |
2012.01.19 |
| 申请人 |
Liu Jianhua |
发明人 |
Liu Jianhua |
| 分类号 |
H01L29/788;H01L29/66 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. An EEPROM core structure embedded into BCD process, comprising a selection transistor and a storage transistor connected in series, characterized in that, the selection transistor is an LDNMOS transistor.
|
| 地址 |
Shanghai CN |
