THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

主权项

1. A thin film transistor, comprising:
an oxide semiconductor; a source electrode and a drain electrode facing each other, the source electrode and the drain electrode positioned at two opposite sides, respectively, of the oxide semiconductor; a low conductive region positioned between the source electrode or the drain electrode and the oxide semiconductor; an insulating layer positioned on the oxide semiconductor and the low conductive region; and a gate electrode positioned on the insulating layer, wherein the insulating layer covers the oxide semiconductor and the low conductive region, and wherein a carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.