| 摘要 |
The purpose of the present invention is to provide a gas barrier film exhibiting sufficient gas barrier performance even under high-temperature and high-humidity conditions. The present invention pertains to a gas barrier film including a substrate, a first layer, a second layer, and a third layer in the sequence listed; the first layer including at least one of an oxide, a nitride, an oxynitride, and an oxycarbide of at least one element selected from the group consisting of silicon, aluminum, and titanium and being formed by CVD; the second layer including an inorganic oxide and being formed by atomic layer deposition; and the third layer being obtained by performing a reforming process on a coating formed by applying a liquid containing a silicon compound. |
