发明名称 POLYCRYSTALLINE PHOTODETECTORS AND METHODS OF USE AND MANUFACTURE
摘要 <p>Method and apparatus for semiconductor devices are presented. The method may be performed by applying a layer of polycrystalline material to a surface of a substrate. The polycrystalline layer may be a lead salt semiconductor material. The method is further performed by applying junctions and two or more spaced apart electrical contacts to the polycrystalline material to create a photovoltaic device in which changes in light interacting with the polycrystalline material causes changes in voltage at the junctions thereby enabling photodetection.</p>
申请公布号 WO2014093877(A1) 申请公布日期 2014.06.19
申请号 WO2013US75110 申请日期 2013.12.13
申请人 THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA 发明人 SHI, ZHISHENG
分类号 H01L31/08 主分类号 H01L31/08
代理机构 代理人
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