| 摘要 |
The present invention relates to an apparatus and a method for manufacturing a semiconductor substrate and, more specifically, to an apparatus and a method for processing a substrate using plasma. The substrate processing apparatus according to an embodiment of the present invention comprises: a housing providing a space in which the plasma process is performed; a gas supply unit supplying a gas into the housing; a support unit arranged in the housing and a plasma source generating a plasma from the gas in the housing, and supporting a substrate; and a heating unit arranged in the housing, and including a far infrared fiber and a far infrared ray generator. |
