发明名称 |
FABRICATION OF WAFER BONDED ALGAINP LIGHT EMITTING DIODE WITH TEXTURED N-TYPE ALAS CURRENT SPREADING LAYER |
摘要 |
The present invention relates to an wafer bonding-type AlGaInP-based light emitting diode and a method of manufacturing the same and, more specifically, to a formation of an n-type current spreading layer which is a thick texture with a low resistance and a larger band gap than an AlGaInP material on top of the n-type confinement layer in order to improve the luminous efficiency of wafer bonding type high-efficiency AlGaInP light emitting diode. |
申请公布号 |
KR20140075155(A) |
申请公布日期 |
2014.06.19 |
申请号 |
KR20120143202 |
申请日期 |
2012.12.11 |
申请人 |
AUK CORP. |
发明人 |
LEE, HYUNG JOO;KIM, YOUNG JIN |
分类号 |
H01L33/14;H01L33/22 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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