ZINC OXIDE FILM METHOD AND STRUCTURE FOR CIGS CELL

摘要

A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about 0.02 Torr. In a specific embodiment, a mixture of reactant species derived from diethylzinc species, water species and a carrier gas is introduced into the chamber. The method further introduces a diborane species using a selected flow rate into the mixture of reactant species. A zinc oxide film is formed overlying the window layer to define a transparent conductive oxide using the selected flow rate to provide a resistivity of about 2.5 milliohm-cm and less and an average grain size of about 3000 to 5000 Angstroms

主权项

1. A method of forming a zinc oxide film for a photovoltaic device, the method comprising:
providing a substrate in a deposition chamber, wherein the substrate comprises an absorber layer and an overlying window layer; subjecting the deposition chamber to a vacuum pressure ranging from about 0.1 Torr to about 0.02 Torr; and flowing a zinc-containing precursor and an oxygen-containing precursor into the deposition chamber to form a zinc oxide film over the window layer.