Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling

摘要

A machine includes a thermal ramp chamber; a thermal soak chamber coupled to the thermal ramp chamber; and a cooling chamber coupled to the thermal soak chamber. The cooling chamber can be an indirect cooling chamber including a thermal buffer that includes a substrate carrier. Each of the chambers can include an independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of an elemental reactant containing vapor and ii) independent control of a partial vapor pressure of an elemental reactant vapor within that chamber.

主权项

1. A method, comprising: transferring a substrate from a loadlock into a thermal ramp chamber; then thermally processing the substrate in the thermal ramp chamber wherein the thermal ramp chamber includes a first independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of a first elemental reactant containing vapor and ii) independent control of a partial vapor pressure of first elemental reactant vapor within the thermal ramp chamber; then transferring the substrate from the thermal ramp chamber to a thermal soak chamber; then soaking the substrate in the thermal soak chamber wherein the thermal soak chamber includes a second independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of a second elemental reactant containing vapor and ii) independent control of a partial vapor pressure of a second elemental reactant vapor within the thermal soak chamber; then transferring the substrate from the thermal soak chamber to a cooling chamber; and then cooling the substrate in the cooling chamber wherein the cooling chamber includes a third independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of a third elemental reactant containing vapor and ii) independent control of a partial vapor pressure of a third elemental reactant vapor within the cooling chamber.