发明名称 |
RF POWER TRANSISTOR CIRCUITS |
摘要 |
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency. |
申请公布号 |
US2014167855(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201414185291 |
申请日期 |
2014.02.20 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
LADHANI HUSSAIN H.;BOUISSE GERARD J.;JONES JEFFREY K. |
分类号 |
H03F1/32;H03F3/21;H03F3/193 |
主分类号 |
H03F1/32 |
代理机构 |
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代理人 |
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主权项 |
1. A radio frequency (RF) power transistor circuit comprising:
a first power transistor having a control electrode for receiving a first RF input signal, and a first current electrode for providing a first RF output signal; and a first decoupling circuit, comprising:
a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and a voltage reference, wherein the first inductive element and the first capacitor form a first inductor/capacitor circuit, and wherein the first resistor is configured to dampen a resonance of the first inductor/capacitor circuit.
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地址 |
AUSTIN TX US |