| 发明名称 |
PIEZOELECTRIC THIN FILM RESONATOR |
| 摘要 |
A piezoelectric thin film resonator includes: a substrate; a piezoelectric film that is located on the substrate and includes a first film made of an aluminum nitride film containing an additive element and second films located on an upper surface and a lower surface of the first film and made of an aluminum nitride film containing the additive element at a concentration lower than that of the first film; and a lower electrode and an upper electrode that are located to sandwich the piezoelectric film. |
| 申请公布号 |
US2014167560(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201314089598 |
申请日期 |
2013.11.25 |
| 申请人 |
TAIYO YUDEN CO., LTD. |
发明人 |
ONDA Yosuke |
| 分类号 |
H01L41/18 |
主分类号 |
H01L41/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A piezoelectric thin film resonator comprising:
a substrate; a piezoelectric film that is located on the substrate and includes a first film made of an aluminum nitride film containing an additive element and second films located on an upper surface and a lower surface of the first film and made of an aluminum nitride film containing the additive element at a concentration lower than that of the first film; and a lower electrode and an upper electrode that are located to sandwich the piezoelectric film.
|
| 地址 |
Tokyo JP |
